摘要： Growth of InGaSb/AlSb high hole mobility quantum well field effect transistors (QW FETs) on Si substrates with a step-graded GaAsSb metamorphic buffer layer by molecular beam epitaxy is explored. With an optimized growth temperature for the InGaSb/AlSb QW, hole mobility of 770cm2/Vs and 3060cm2/Vs have been achieved at room temperature and 77K, respectively. It is also found that the twins in the samples do not cause significant anisotropic behavior of the InGaSb QW FETs in term of gate direction. •Growth of InGaSb/AlSb quantum well field effect transistors on Si substrates with a step-graded GaAsSb metamorphic buffer layer by molecular beam epitaxy is explored.•Hole mobility of 770cm2/Vs and 3060cm2/Vs has been achieved at room temperature and 77K, respectively.•Twins in the QWs do not cause significant anisotropic behavior of the InGaSb QW FETs in term of gate direction. 出版者： Elsevier B.V 出版日期： 2015-09-01 出處： Journal of crystal growth, 2015-09, Vol.425, p.385-388 版權： 2015 Elsevier B.V. 識別號： ISSN: 0022-0248 識別號： EISSN: 1873-5002 識別號： DOI: 10.1016/j.jcrysgro.2015.03.052
