Institute of Electrical and Electronics Engineers Inc.;New York, NY: IEEE
摘要:
摘要： This paper investigates the electrostatic integrity (EI) of ultra-thin-body (UTB) germanium-on-insulator (GeOI) and InGaAs-OI n-MOSFETs considering quantum confinement (QC) using a derived analytical solution of Schrödinger equation verified with TCAD numerical simulation. Although the electron conduction path of the high-mobility channel device can be far from the frontgate interface due to high channel permittivity, our study indicates that the quantum confinement effect can move the carrier centroid toward the frontgate and, therefore, improve the subthreshold swing (SS) of the UTB device. Since InGaAs, Ge, and Si channels exhibit different degrees of quantum confinement due to different quantization effective mass, the impact of quantum confinement has to be considered when one-to-one comparisons among UTB InGaAs-OI, GeOI, and SOI MOSFETs regarding the subthreshold swing and electrostatic integrity are made. 其他題名： TNANO 出版者： New York, NY: IEEE 出版日期： 2012-03-01 出處： IEEE transactions on nanotechnology, 2012-03, Vol.11 (2), p.287-291 資源來源： IEEE Electronic Library (IEL) 版權： 2015 INIST-CNRS 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Mar 2012 識別號： ISSN: 1536-125X 識別號： EISSN: 1941-0085 識別號： DOI: 10.1109/TNANO.2011.2169084 識別號： CODEN: ITNECU
