Japan Society of Applied Physics;The Japan Society of Applied Physics
摘要:
摘要： The electrical characteristics of a series of AlInN high-electron-mobility transistors (HEMTs) with a GaN cap layer ranging from 0 to 26 nm are investigated for power switching applications. The breakdown voltage (VB), mobility of two-dimensional electron gas, on-state resistance (Ron), and dynamic Ron of the HEMTs are improved by increasing the cap layer thickness. The improved electrical characteristics are attributed to the GaN cap layer, which not only reduces the surface E-field but also raises the conduction band of the barrier layer and effectively prevents electrons from being trapped in the AlInN barrier and above. 其他題名： Appl. Phys. Express 出版者： The Japan Society of Applied Physics 出版日期： 2015-06-01 出處： Applied physics express, 2015-06, Vol.8 (6), p.64102 資源來源： Institute of Physics Journals 版權： 2015 The Japan Society of Applied Physics 識別號： ISSN: 1882-0778 識別號： EISSN: 1882-0786 識別號： DOI: 10.7567/APEX.8.064102 識別號： CODEN: APEPC4
