Institution of Engineering and Technology;Stevenage: The Institution of Engineering and Technology
摘要:
摘要： This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shift threshold voltage from 0.47 to 0 V. A 0.2 µm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak gm of 83 mS/mm. 出版者： Stevenage: The Institution of Engineering and Technology 出版日期： 2013-03-28 出處： Electronics letters, 2013-03, Vol.49 (7), p.499-500 資源來源： Wiley Online Library Open Access 版權： The Institution of Engineering and Technology 版權： 2020 The Institution of Engineering and Technology 版權： 2014 INIST-CNRS 識別號： ISSN: 0013-5194 識別號： ISSN: 1350-911X 識別號： EISSN: 1350-911X 識別號： DOI: 10.1049/el.2013.0430 識別號： CODEN: ELLEAK
