Investigation of C-terminal domain of SARS nucleocapsid protein-Duplex DNA interaction using transistors and binding-site models

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題名:	Investigation of C-terminal domain of SARS nucleocapsid protein-Duplex DNA interaction using transistors and binding-site models
作者:	綦振瀛;Hsu, You-Ren;Kang, Yen-Wen;Fang, Jung-Ying;Lee, Geng-Yen;Chyi, Jen-Inn;Chang, Chung-ke;Huang, Chih-Cheng;Hsu, Chen-Pin;Huang, Tai-huang;Huang, Yu-Fen;Sun, Yuh-Chang;Hsu, Chia-Hsien;Chen, Chih-Chen;Li, Sheng-Shian;Yeh, J. Andrew;Yao, Da-Jeng;Ren, Fan;Wang, Yu-Lin
貢獻者:	資訊電機學院電機工程學系
關鍵詞:	Aluminum gallium nitrides;Assaying;Binding;Binding sites;Coronaviridae;Deoxyribonucleic acid;Dissociation constants;Gallium nitrides;GaN;HEMTs;High electron mobility transistors;SARS;SARS coronavirus;Semiconductor devices;Sensors
日期:	2014-03-31
上傳時間:	2026-04-23 14:20:28 (UTC+8)
出版者:	Elsevier;Switzerland: Elsevier B.V
摘要:	摘要： AlGaN/GaN high electron mobility transistors (HEMTs) were used to sense the binding between double stranded DNA (dsDNA) and the severe acute respiratory syndrome coronavirus (SARS-CoV) nucleocapsid protein (N protein). The sensing signals were the drain current change of the HEMTs induced by the protein–dsDNA binding. Binding-site models using surface coverage ratios were utilized to analyze the signals from the HEMT-based sensors to extract the dissociation constants and predict the number of binding sites. Two dissociation constants, KD1=0.0955nM, KD2=51.23nM, were obtained by fitting the experimental results into the two-binding-site model. The result shows that this technique is more competitive than isotope-labeling electrophoretic mobility shift assay (EMSA). We demonstrated that AlGaN/GaN HEMTs were highly potential in constructing a semiconductor-based-sensor binding assay to extract the dissociation constants of nucleotide–protein interaction. 其他題名： Sens Actuators B Chem 出版者： Switzerland: Elsevier B.V 出版日期： 2014-03-31 出處： Sensors and actuators. B, Chemical, 2014-03, Vol.193, p.334-339 版權： 2013 Elsevier B.V. 版權： Copyright © 2013 Elsevier B.V. Published by Elsevier B.V. All rights reserved. 版權： Copyright © 2013 Elsevier B.V. Published by Elsevier B.V. All rights reserved. 2013 Elsevier B.V. 識別號： ISSN: 0925-4005 識別號： ISSN: 1873-3077 識別號： EISSN: 1873-3077 識別號： EISSN: 0925-4005 識別號： DOI: 10.1016/j.snb.2013.11.087 識別號： PMID: 32288246
顯示於類別:	[電機工程學系] 期刊論文

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