摘要： In this study, Ga-doped ZnO (GZO) thin films were deposited on GaN templates by using plasma-assisted molecular beam epitaxy. To obtain low resistivity GZO films, in-situ post-annealing under Zn overpressure was carried out to avoid the generation of acceptor-liked Zn vacancies. The resultant films showed optical transparency over 95% in the visible spectral range. By reducing the acceptor-like defects, GZO films with compensation ratio near 0.4 and resistivity simultaneously lower than 1×10−4Ωcm have been successfully demonstrated. •In-situ post-growth annealing under Zn overpressure was first demonstrated to reduce the resistivity of the GZO films by minimizing the concentration of acceptor-like Zn vacancy caused by thermal desorption of Zn atoms.•A minimal resistivity of 9×10−5Ωcm is achieved on the GZO films grown at 300°C.•We have successfully demonstrated GZO films with compensation ratio below 0.4 and resistivity near 1×10−4Ωcm, simultaneously. 出版者： Elsevier B.V 出版日期： 2015-09-01 出處： Journal of crystal growth, 2015-09, Vol.425, p.216-220 版權： 2015 Elsevier B.V. 識別號： ISSN: 0022-0248 識別號： EISSN: 1873-5002 識別號： DOI: 10.1016/j.jcrysgro.2015.02.034
