Institute of Electrical and Electronics Engineers Inc.;IEEE
摘要:
摘要： A CdZnO/n-ZnO multiple-quantum-well (QW) light-emitting diode (LED), with the QWs and n + -ZnO capping layer grown with molecular beam epitaxy on p-GaN, which is grown with metal-organic chemical vapor deposition, is fabricated and characterized. Because of the weak carrier localization mechanism in the ZnO-based LED, its defect emission is quite strong and dominates the LED output when injection current is low. The blue shift of the LED output spectrum in applying a forward-biased voltage and the large blue-shift range in increasing injection current show the different behaviors of such a ZnO-based LED from those of a nitride LED. 其他題名： LPT 出版者： IEEE 出版日期： 2012-06-01 出處： IEEE photonics technology letters, 2012-06, Vol.24 (11), p.909-911 資源來源： IEEE Electronic Library (IEL) 識別號： ISSN: 1041-1135 識別號： EISSN: 1941-0174 識別號： DOI: 10.1109/LPT.2012.2190397 識別號： CODEN: IPTLEL
