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| 題名: | Multi-mechanism efficiency enhancement in growing Ga-doped ZnO as the transparent conductor on a light-emitting diode |
| 作者: | 姚毓峰;Yao, Yu-Feng;Lin, Chun-Han;Hsieh, Chieh;Su, Chia-Ying;Zhu, Erwin;Yang, Shaobo;Weng, Chi-Ming;Su, Ming-Yen;Tsai, Meng-Che;Wu, Shang-Syuan;Chen, Sheng-Hung;Tu, Charng-Gan;Chen, Hao-Tsung;Kiang, Yean-Woei;Yang, C. C. |
| 貢獻者: | 資訊電機學院電機工程學系 |
| 日期: | 2015-12-14 |
| 上傳時間: | 2026-04-23 14:26:44 (UTC+8) |
| 出版者: | The Optical Society;United States |
| 摘要: | 摘要： The combined effects of a few mechanisms for emission efficiency enhancement produced in the overgrowth of the transparent conductor layer of Ga-doped ZnO (GaZnO) on a surface Ag-nanoparticle (NP) coated light-emitting diode (LED), including surface plasmon (SP) coupling, current spreading, light extraction, and contact resistivity reduction, are demonstrated. With a relatively higher GaZnO growth temperature (350 °C), melted Ag NPs can be used as catalyst for forming GaZnO nanoneedles (NNs) through the vapor-liquid-solid growth mode such that light extraction efficiency can be increased. Meanwhile, residual Ag NPs are buried in a simultaneously grown GaZnO layer for inducing SP coupling. With a relatively lower GaZnO growth temperature (250 °C), all the Ag NPs are preserved for generating a stronger SP coupling effect. By using a thin annealed GaZnO interlayer on p-GaN before Ag NP fabrication, the contact resistivity at the GaZnO/p-GaN interface and hence the overall device resistance can be reduced. Although the use of this interlayer blue-shifts the localized surface plasmon resonance peak of the fabricated Ag NPs from the quantum well emission wavelength of the current study (535 nm) such that the SP coupling effect becomes weaker, it is useful for enhancing the SP coupling effect in an LED with a shorter emission wavelength.
其他題名： Opt Express
出版者： United States
出版日期： 2015-12-14
出處： Optics express, 2015-12, Vol.23 (25), p.32274-32288
資源來源： Optica Publishing Group Journals
識別號： ISSN: 1094-4087
識別號： EISSN: 1094-4087
識別號： DOI: 10.1364/OE.23.032274
識別號： PMID: 26699018 |
| 顯示於類別: | [電機工程學系] 期刊論文
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