N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator

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题名:	N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator
作者:	綦振瀛;Chiu, Hsien-Chin;Wu, Chia-Hsuan;Chi, Ji-Fan;Chyi, J-I;Lee, G-Y
贡献者:	資訊電機學院電機工程學系
关键词:	Channels;Devices;Electrodes;Fluctuation;Gallium nitrides;Gates;Insulators;Nitrous oxides;Noise
日期:	2015-01-01
上传时间:	2026-04-23 14:27:29 (UTC+8)
出版者:	Elsevier Ltd.
摘要:	摘要： A normally-off InAlN/GaN MIS-HEMT with HfZrO sub(2) gate insulator was realized and investigated. By using N sub(2)O plasma treatment beneath the gate region, 13 nm InAlN Schottky layer was oxidized to AlON sub(x) + 4 nm InAlN Schottky layer. The strong polarization induced carriers in traditional InAlN/GaN 2 DEG quantum well was reduced for enhancement-mode operation. High-k thin film HfZrO sub(2) was used for gate insulator of E-mode device to further suppress gate leakage current and enhance device gate operation range. The maximum drain current of E-mode InAlN/GaN MIS-HEMT was 498 mA/mm and this value was higher than previous published InAlN/GaN E-mode devices. The measurement results of low-frequency noise also concluded that the low frequency noise is attributed to the mobility fluctuation of the channel and N sub(2)O plasma treatment did not increase fluctuation center of gate electrode. 出版日期： 2015-01-01 出處： Microelectronics and reliability, 2015-01, Vol.55 (1), p.48-51 資源來源： ScienceDirect (Elsevier) Journals 識別號： ISSN: 0026-2714 識別號： DOI: 10.1016/j.microrel.2014.09.026
显示于类别:	[電機工程學系] 期刊論文

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