Phosphor-free, white-light LED under alternating-current operation

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/107955

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/107955

Title:	Phosphor-free, white-light LED under alternating-current operation
Authors:	姚毓峰;Yao, Yu-Feng;Chen, Hao-Tsung;Su, Chia-Ying;Hsieh, Chieh;Lin, Chun-Han;Kiang, Yean-Woei;Yang, C. C.
Contributors:	資訊電機學院電機工程學系
Date:	2014-11-15
Issue Date:	2026-04-23 14:29:34 (UTC+8)
Publisher:	The Optical Society;United States
Abstract:	摘要： A light-emitting diode structure, consisting of a p-GaN layer, a CdZnO/ZnO quantum-well (QW) structure, a high-temperature-grown ZnO layer, and a GaZnO layer, is fabricated. Under forward bias, the device effectively emits green-yellow light, from the QW structure, at the rim of device mesa. Under reverse bias, electrons in the valence band of the p-GaN layer move into the conduction band of the GaZnO layer, through a QW-state-assisted tunneling process, to recombine with the injected holes in the GaZnO layer, for emitting yellow-red and shallow ultraviolet light over the entire mesa area. Also, carrier recombination in the p-GaN layer produces blue light. By properly designing the thickness of the high-temperature grown ZnO layer, the emission intensity under forward bias can be controlled such that, under alternating-current operation at 60 Hz, the spatial and spectral mixtures of the emitted lights of complementary colors, under forward and reverse biases, result in white light generation based on persistence of vision. 其他題名： Opt Lett 出版者： United States 出版日期： 2014-11-15 出處： Optics letters, 2014-11, Vol.39 (22), p.6371 資源來源： Optica Publishing Group Journals 識別號： ISSN: 0146-9592 識別號： ISSN: 1539-4794 識別號： EISSN: 1539-4794 識別號： DOI: 10.1364/OL.39.006371 識別號： PMID: 25490471
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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