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    題名: Phosphor-free, white-light LED under alternating-current operation
    作者: 姚毓峰;Yao, Yu-Feng;Chen, Hao-Tsung;Su, Chia-Ying;Hsieh, Chieh;Lin, Chun-Han;Kiang, Yean-Woei;Yang, C. C.
    貢獻者: 資訊電機學院電機工程學系
    日期: 2014-11-15
    上傳時間: 2026-04-23 14:29:34 (UTC+8)
    出版者: The Optical Society;United States
    摘要: 摘要: A light-emitting diode structure, consisting of a p-GaN layer, a CdZnO/ZnO quantum-well (QW) structure, a high-temperature-grown ZnO layer, and a GaZnO layer, is fabricated. Under forward bias, the device effectively emits green-yellow light, from the QW structure, at the rim of device mesa. Under reverse bias, electrons in the valence band of the p-GaN layer move into the conduction band of the GaZnO layer, through a QW-state-assisted tunneling process, to recombine with the injected holes in the GaZnO layer, for emitting yellow-red and shallow ultraviolet light over the entire mesa area. Also, carrier recombination in the p-GaN layer produces blue light. By properly designing the thickness of the high-temperature grown ZnO layer, the emission intensity under forward bias can be controlled such that, under alternating-current operation at 60 Hz, the spatial and spectral mixtures of the emitted lights of complementary colors, under forward and reverse biases, result in white light generation based on persistence of vision.
    其他題名: Opt Lett
    出版者: United States
    出版日期: 2014-11-15
    出處: Optics letters, 2014-11, Vol.39 (22), p.6371
    資源來源: Optica Publishing Group Journals
    識別號: ISSN: 0146-9592
    識別號: ISSN: 1539-4794
    識別號: EISSN: 1539-4794
    識別號: DOI: 10.1364/OL.39.006371
    識別號: PMID: 25490471
    顯示於類別:[電機工程學系] 期刊論文

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