| 摘要: | 摘要： Sb-based semiconductors incorporating heterostructures of InP, InAs, AlSb, InSb, GaSb, InGaAs, InGaSb, GaAsSb and InGaAsSb can be used for high speed, low power applications such as wide-bandwidth telecommunications for aircraft, satellites, wireless communication, and global positioning systems, as well as thermophotovoltaic cells, THz medical imaging and remote sensing, IR sensors for space exploration, high resolution biomedical spectroscopy and military systems, including security scanners. Sb-based electronic devices such as heterojunction bipolar transistors (HBTs) offer high speed, low power consumption and good breakdown voltages. High electron mobility InAs/AlSb or InSb/AlSb and high hole mobility InGaSb/AlSb quantum well heterostructure field effect transistors (HFETs) have also been widely pursued for THz amplifiers and high speed complementary logic circuits.
出版者： Royal Society of Chemistry (RSC)
出版日期： 2013-01-01
出處： Journal of Materials Chemistry C, 2013-01, Vol.1 (31), p.4616--4627
資源來源： Royal Society of Chemistry
識別號： ISSN: 2050-7526
識別號： EISSN: 2050-7534
識別號： DOI: 10.1039/c3tc30585f |
