Institute of Electrical and Electronics Engineers Inc.;IEEE
摘要:
摘要： We demonstrate the novel operation of a Si/Ge-based avalanche photodiode (APD) for the direct generation of ultra-wideband (UWB) frequency comb lines for impulse radio (IR) wireless communication. By applying a dc bias (V bias ) over the breakdown voltage (V br ) of the APD, the device can exhibit a significant resonant frequency without any optical signal illumination, and function as an impact ionization avalanche transit time diode-based oscillator. Under an additional electrical intermediate frequency (IF) injection, several frequency comb lines, with a spacing equal to the IF frequency, can be derived from the second harmonic of the oscillating frequency. By mixing the output pulse train from the APD-based UWB generator with the data signal from another Si/Ge APD (on the same chip) operated in the linear mode (V bias <; V br ), which can perform high-sensitivity optical data detection, error-free IR wireless-linking with data rate as high as 3.0 Gbit/s has been successfully achieved. 其他題名： LPT 出版者： IEEE 出版日期： 2012-06-15 出處： IEEE photonics technology letters, 2012-06, Vol.24 (12), p.1069-1071 資源來源： IEEE Electronic Library (IEL) 識別號： ISSN: 1041-1135 識別號： EISSN: 1941-0174 識別號： DOI: 10.1109/LPT.2012.2195304 識別號： CODEN: IPTLEL
