American Institute of Physics;Melville: American Institute of Physics
摘要:
摘要： Highly Ga-doped ZnO (GZO) films of thicknesses d = 5, 25, 50, and 300 nm, grown on 160-nm ZnO buffer layers by molecular beam epitaxy, had 294-K Hall-effect mobilities μH of 64.1, 43.4, 37.0, and 34.2 cm2/V-s, respectively. This extremely unusual ordering of μH vs d is explained by the existence of a very high-mobility Debye tail in the ZnO, arising from the large Fermi-level mismatch between the GZO and the ZnO. Scattering theory in conjunction with Poisson analysis predicts a Debye-tail mobility of 206 cm2/V-s at the interface (z = d), falling to 58 cm2/V-s at z = d + 2 nm. Excellent fits to μH vs d and sheet concentration ns vs d are obtained with no adjustable parameters. 出版者： Melville: American Institute of Physics 出版日期： 2015-04-13 出處： Applied physics letters, 2015-04, Vol.106 (15) 資源來源： AIP Publishing 版權： 2015 AIP Publishing LLC. 識別號： ISSN: 0003-6951 識別號： ISSN: 1520-8842 識別號： ISSN: 1077-3118 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.4917561
