Significant mobility enhancement in extremely thin highly doped ZnO films

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Title:	Significant mobility enhancement in extremely thin highly doped ZnO films
Authors:	姚毓峰;Look, David C.;Heller, Eric R.;Yao, Yu-Feng;Yang, C. C.
Contributors:	資訊電機學院電機工程學系
Keywords:	Applied physics;Buffer layers;BUFFERS;CARRIER MOBILITY;CONCENTRATION RATIO;CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;DEBYE LENGTH;DOPED MATERIALS;Epitaxial growth;FERMI LEVEL;GALLIUM COMPOUNDS;HALL EFFECT;INTERFACES;LAYERS;MOBILITY;MOLECULAR BEAM EPITAXY;SCATTERING;THIN FILMS;Zinc oxide;ZINC OXIDES
Date:	2015-04-13
Issue Date:	2026-04-23 14:39:22 (UTC+8)
Publisher:	American Institute of Physics;Melville: American Institute of Physics
Abstract:	摘要： Highly Ga-doped ZnO (GZO) films of thicknesses d = 5, 25, 50, and 300 nm, grown on 160-nm ZnO buffer layers by molecular beam epitaxy, had 294-K Hall-effect mobilities μH of 64.1, 43.4, 37.0, and 34.2 cm2/V-s, respectively. This extremely unusual ordering of μH vs d is explained by the existence of a very high-mobility Debye tail in the ZnO, arising from the large Fermi-level mismatch between the GZO and the ZnO. Scattering theory in conjunction with Poisson analysis predicts a Debye-tail mobility of 206 cm2/V-s at the interface (z = d), falling to 58 cm2/V-s at z = d + 2 nm. Excellent fits to μH vs d and sheet concentration ns vs d are obtained with no adjustable parameters. 出版者： Melville: American Institute of Physics 出版日期： 2015-04-13 出處： Applied physics letters, 2015-04, Vol.106 (15) 資源來源： AIP Publishing 版權： 2015 AIP Publishing LLC. 識別號： ISSN: 0003-6951 識別號： ISSN: 1520-8842 識別號： ISSN: 1077-3118 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.4917561
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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