摘要： Aluminum gallium nitride-based double heterostructures with two different active layer widths have been grown on GaN templates by metalorganic chemical vapor deposition. Crystalline quality has been investigated using high-resolution x-ray diffraction analysis, and screw, edge, as well as total dislocation densities in the GaN epilayer have been calculated. The dislocation density of GaN has been found to be on the order of 10 8 cm −2 . The nominal Al composition and in-plane strain ε xx for the AlGaN layer grown on the GaN layer have been measured by asymmetric reciprocal-space mapping. Surface properties and cross-sectional views of the samples have been analyzed using atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM), respectively. Room-temperature time-resolved photoluminescence and photoluminescence measurements have been performed on Al 0.18 Ga 0.82 N/Al 0.45 Ga 0.55 N double heterostructures and the GaN template. The interface recombination velocity ( S ) of AlGaN-based double heterostructures has been calculated using carrier decay time measurement, increasing from 8.7 × 10 3 cm/s to 13.4 × 10 3 cm/s with varying active layer thickness. 其他題名： Journal of Elec Materi 出版者： Boston: Springer US 出版日期： 2013-08-01 出處： Journal of electronic materials, 2013-08, Vol.42 (8), p.2486-2491 資源來源： EBSCOhost OmniFile Full Text Select 版權： TMS 2013 版權： 2014 INIST-CNRS 識別號： ISSN: 0361-5235 識別號： EISSN: 1543-186X 識別號： DOI: 10.1007/s11664-013-2632-x 識別號： CODEN: JECMA5
