摘要： We study the thermal stability of P doped and undoped pseudomorphically strained Si:C alloy formed by high fluence ion implantation and subsequent solid phase epitaxial regrowth (SPER), under post-annealing conditions far below the β-SiC precipitation threshold. The strain is measured by high resolution X-ray diffractometer (HRXRD) and kinematic simulation. By plotting the differential strain relaxation with respect to post-annealing time, we found much lower deactivation energy at the near surface region while the presence of high P concentration results in more significant strain relaxation. We explain the near surface relaxation by considering the interstitials injection by surface oxide formations during the post annealing process. P in the bulk on the other hand plays the role as additional interstitial kick-out mediator and lowers the thermal stability. 出版者： Elsevier B.V 出版日期： 2012-07-01 出處： Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-07, Vol.282, p.85-87 版權： 2011 Elsevier B.V. 識別號： ISSN: 0168-583X 識別號： EISSN: 1872-9584 識別號： DOI: 10.1016/j.nimb.2011.08.045
