摘要： This study investigates the temperature-dependent decay dynamics in highly mismatched ZnSe0.950Te0.050 alloy using photoluminescence (PL) and time-resolved PL spectroscopy. The PL peak energy exhibits a V-shaped dependence on temperature (10–300 K), indicating strong carrier localization. Kohlrausch’s stretched exponential law, in which the deduced stretching exponent β is highly consistent with the V-shaped PL peak shift, closely corresponds to the complex decay curves over a wide temperature range. Additionally, the PL lifetime τ initially increases and then monotonically declines as the temperature increases. These findings agree excellently with the low electron-hole binding energy upon thermal ionization of weakly bound electrons. 出版日期： 2012-02-13 出處： Applied physics letters, 2012-02, Vol.100 (7) 資源來源： AIP Journals (American Institute of Physics) 識別號： ISSN: 0003-6951 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.3687187
