摘要： •The InAs/AlSb HEMT using refractory iridium (Ir) gate technology was proposed.•The Ir-gate exhibited a superior metal work function for increasing ΦB of InAs/AlSb heterostructures to 0.58eV.•The Ir-gate HEMT show higher threshold voltage and lower gate current.•The Ir-gated HEMT also shows stability improvement of DC characteristics under hot carrier stress. In this work, the InAs/AlSb high electron mobility transistors (HEMTs) on GaAs semi-insulating substrate using refractory iridium (Ir) gate technology was proposed. The Ir-gate exhibited a superior metal work function which was beneficial for increasing Schottky barrier height of InAs/AlSb heterostructures to 0.58eV. Compared to the Ti-gate HEMT, the Ir-gate HEMT shows higher threshold voltage and lower gate leakage current owing to its higher Schottky barrier height and higher melting point. Moreover, the Ir-gated HEMT also shows the manifest stability improvement of DC characteristics under hot carrier stress as the Ti and As diffusion is alleviated. 出版者： Elsevier Ltd 出版日期： 2015-05-01 出處： Microelectronics and reliability, 2015-05, Vol.55 (6), p.890-893 資源來源： Elsevier ScienceDirect Journals Complete 版權： 2015 Elsevier Ltd 識別號： ISSN: 0026-2714 識別號： EISSN: 1872-941X 識別號： DOI: 10.1016/j.microrel.2015.03.016
