摘要： Nitrogen plasma-activated wafer bonding provides high-strength Si/Si wafer bonding. We found that a hydrofluoric (HF) pre-dip treatment can increase more bonding energy. By reducing drastically the annealing temperature to as low as 75°C, HF-dip and subsequent nitrogen-plasma activation can result in an bonding energy of the Si/Si pair comparable to the silicon fracture strength (2500 mJ/m2). In Si3N4/Si3N4 wafer bonding, the room-temperature bonding results in interface energy as high as 537 mJ/m2 and then reaches the silicon fracture strength through annealing at 200°C for 24 hours. We suggest that the high-strength bonding mechanism is the formation of Si-NH-Si bonds during annealing. 其他題名： ECS Solid State Lett 出版者： The Electrochemical Society 出版日期： 2014-01-01 出處： ECS solid state letters, 2014-01, Vol.3 (8), p.P102-P104 版權： 2014 The Electrochemical Society 識別號： ISSN: 2162-8742 識別號： EISSN: 2162-8750 識別號： DOI: 10.1149/2.0031408ssl
