Electrochemical Society, Inc.;The Electrochemical Society
摘要:
摘要： We demonstrate that the thickness increase of the porous layer on p-type (1-10 ohm-cm) silicon can be inhibited from hundreds to several nm/min in regular anodizing by exposure to He-Ne laser irradiation. During 2.0 mW laser irradiation, the growth in thickness was reduced to 5-6 nm/minute by anodizing with a current density of 10 mA/cm2. The inhibition effect on the thickness increase of porous silicon depends significantly on the laser power during a fixed anodizing time. 其他題名： J. Electrochem. Soc 出版者： The Electrochemical Society 出版日期： 2016-01-01 出處： Journal of the Electrochemical Society, 2016-01, Vol.163 (5), p.H265-H268 資源來源： Institute of Physics Journals 版權： The Author(s) 2016. Published by ECS. 識別號： ISSN: 0013-4651 識別號： ISSN: 1945-7111 識別號： EISSN: 1945-7111 識別號： DOI: 10.1149/2.0851603jes
