Electrochemical Society, Inc.;The Electrochemical Society
摘要:
摘要： Numerous Si nanocrystals on the bulk surface can be efficiently sharpened by a HF-based electrochemical etching with the irradiation of near-infrared (NIR) laser simultaneously. Under the NIR laser-irradiation, the electrons excited from the B-Si complex inhibited the growth of the anodized layer and promoted the formation of nanocrystals by controlling the number of holes that participate in anodization. The effect of NIR laser-irradiation enhanced the photoluminescence by 7-10 times as compared to that obtained when anodization was performed in the dark for growing a normal porous silicon. The transmission electron microscopy images showed clearly that that nanocrystals (<3 nm) were embedded at the interface of the bulk surface and the anodized layer. 其他題名： J. Electrochem. Soc 出版者： The Electrochemical Society 出版日期： 2016-01 出處： Journal of the Electrochemical Society, 2016-01, Vol.163 (9), p.E258-E262 資源來源： Institute of Physics Journals 版權： The Author(s) 2016. Published by ECS. 識別號： ISSN: 0013-4651 識別號： ISSN: 1945-7111 識別號： EISSN: 1945-7111 識別號： DOI: 10.1149/2.0531609jes
