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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29275

    Title: Improved temperature characteristics of 1.55 mu m InAlGaAs quantum well lasers with multiquantum barrier at p-cladding layer
    Authors: Chyi,JI;Chen,MH;Pan,JW;Shih,TT
    Contributors: 電機工程研究所
    Date: 1999
    Issue Date: 2010-06-29 20:20:36 (UTC+8)
    Publisher: 中央大學
    Abstract: A multiquantum barrier and graded-index separate confinement heterostructure are employed in a 1.55 mu m InAlGaAs multiquantum well laser to reduce the threshold current and temperature sensitivity. A characteristic temperature as high as 77K is measured between 25 and 75 degrees C for as-cleaved 1000 mu m-long uncoated devices. The degradation of slope efficiency in the same temperature range is less than 30%.
    Appears in Collections:[電機工程研究所] 期刊論文

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