Improved temperature characteristics of 1.55 mu m InAlGaAs quantum well lasers with multiquantum barrier at p-cladding layer

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Title:	Improved temperature characteristics of 1.55 mu m InAlGaAs quantum well lasers with multiquantum barrier at p-cladding layer
Authors:	Chyi,JI;Chen,MH;Pan,JW;Shih,TT
Contributors:	電機工程研究所
Keywords:	INP LASERS;OPERATION;PERFORMANCE;ELECTRON;DIODES
Date:	1999
Issue Date:	2010-06-29 20:20:36 (UTC+8)
Publisher:	中央大學
Abstract:	A multiquantum barrier and graded-index separate confinement heterostructure are employed in a 1.55 mu m InAlGaAs multiquantum well laser to reduce the threshold current and temperature sensitivity. A characteristic temperature as high as 77K is measured between 25 and 75 degrees C for as-cleaved 1000 mu m-long uncoated devices. The degradation of slope efficiency in the same temperature range is less than 30%.
Relation:	ELECTRONICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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