題名: | Improved temperature characteristics of 1.55 mu m InAlGaAs quantum well lasers with multiquantum barrier at p-cladding layer |
作者: | Chyi,JI;Chen,MH;Pan,JW;Shih,TT |
貢獻者: | 電機工程研究所 |
關鍵詞: | INP LASERS;OPERATION;PERFORMANCE;ELECTRON;DIODES |
日期: | 1999 |
上傳時間: | 2010-06-29 20:20:36 (UTC+8) |
出版者: | 中央大學 |
摘要: | A multiquantum barrier and graded-index separate confinement heterostructure are employed in a 1.55 mu m InAlGaAs multiquantum well laser to reduce the threshold current and temperature sensitivity. A characteristic temperature as high as 77K is measured between 25 and 75 degrees C for as-cleaved 1000 mu m-long uncoated devices. The degradation of slope efficiency in the same temperature range is less than 30%. |
關聯: | ELECTRONICS LETTERS |
顯示於類別: | [電機工程研究所] 期刊論文
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