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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29298

    Title: Defect study on the strain-relaxed InxAl1-xAs epilayers (x<0.4) grown on GaAs
    Authors: Shieh,JL;Chang,MN;Cheng,YS;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: DEEP LEVELS
    Date: 1997
    Issue Date: 2010-06-29 20:21:11 (UTC+8)
    Publisher: 中央大學
    Abstract: Defects in Si-doped InxAl1-xAs (0<x<0.4) epilayers on GaAs substrates were systematically investigated by deep-level transient spectroscopy. Three electron traps, ranging from 0.22 to 0.89 eV, were observed in the MBE-grown InxAl1-xAs. Low-temperature growth as well as thermal annealing were found to be capable of reducing these defects effectively, especially the dislocation defect.
    Appears in Collections:[電機工程研究所] 期刊論文

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