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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29352

    Title: Monolithic microwave AlGaAs/InGaAs doped-channel FET switches
    Authors: Ke,LW;Chan,YJ;Chiang,YC
    Contributors: 電機工程研究所
    Date: 1996
    Issue Date: 2010-06-29 20:22:31 (UTC+8)
    Publisher: 中央大學
    Abstract: AlGaAs / InCaAs heterostructure doped-channel FETs were used to fabricate a monolithic microwave front-end switch. The gate width of FETs were characterized to obtain an optimum condition to achieve better microwave performance. An insertion loss lower than 1 dB together with an isolation higher than 20 dB can be realized in this monolithic switch at a frequency below 3 GHz. (C) 1996 John Wiley & Sons, Inc.
    Appears in Collections:[電機工程研究所] 期刊論文

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