EFFECTS OF N2O-PLASMA TREATMENT OF A-SIOXNY/A-SINX GATE INSULATORS ON ELECTRICAL STABILITY OF A-SIH THIN-FILM TRANSISTORS

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Title:	EFFECTS OF N2O-PLASMA TREATMENT OF A-SIOXNY/A-SINX GATE INSULATORS ON ELECTRICAL STABILITY OF A-SIH THIN-FILM TRANSISTORS
Authors:	JEN,TS;LEU,ST;CHOU,TC;HONG,JW;CHANG,CY
Contributors:	電機工程研究所
Keywords:	AMORPHOUS-SILICON
Date:	1994
Issue Date:	2010-06-29 20:24:09 (UTC+8)
Publisher:	中央大學
Abstract:	N2O-plasma was used to treat the as-deposited a-SiO(x)N(y)/a-SiN(x) gate insulators of inverted-staggered a-Si:H thin-film transistors (TFTs), and its effects on electrical properties of TFTs were investigated. The TFTs with N2O-plasma-treated gate insulators tended to have a smaller threshold voltage (V(th)), V(th) Shift and hysteresis width (W(FB)) of the forward and backward transfer characteristics. In addition, the results of a bias-temperature stress (BTS) experiment showed that the N2O-Plasma-treated devices had a smaller decay of drain current with time. These phenomena demonstrated that the N2O-PlasMa treatment could be used to improve the electrical stability of a-Si:H TFTs.
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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