EFFECTS OF N2O-PLASMA TREATMENT OF A-SIOXNY/A-SINX GATE INSULATORS ON ELECTRICAL STABILITY OF A-SIH THIN-FILM TRANSISTORS

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题名:	EFFECTS OF N2O-PLASMA TREATMENT OF A-SIOXNY/A-SINX GATE INSULATORS ON ELECTRICAL STABILITY OF A-SIH THIN-FILM TRANSISTORS
作者:	JEN,TS;LEU,ST;CHOU,TC;HONG,JW;CHANG,CY
贡献者:	電機工程研究所
关键词:	AMORPHOUS-SILICON
日期:	1994
上传时间:	2010-06-29 20:24:09 (UTC+8)
出版者:	中央大學
摘要:	N2O-plasma was used to treat the as-deposited a-SiO(x)N(y)/a-SiN(x) gate insulators of inverted-staggered a-Si:H thin-film transistors (TFTs), and its effects on electrical properties of TFTs were investigated. The TFTs with N2O-plasma-treated gate insulators tended to have a smaller threshold voltage (V(th)), V(th) Shift and hysteresis width (W(FB)) of the forward and backward transfer characteristics. In addition, the results of a bias-temperature stress (BTS) experiment showed that the N2O-Plasma-treated devices had a smaller decay of drain current with time. These phenomena demonstrated that the N2O-PlasMa treatment could be used to improve the electrical stability of a-Si:H TFTs.
關聯:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
显示于类别:	[電機工程研究所] 期刊論文

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