English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 80990/80990 (100%)
造訪人次 : 42768855      線上人數 : 1076
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/29718


    題名: Optical and structural properties of Mg-ion implanted GaN nanowires
    作者: Huang,PJ;Chen,CW;Chen,JY;Chi,GC;Pan,CJ;Kuo,CC;Chen,LC;Hsu,CW;Chen,KH;Hung,SC;Chang,CY;Pearton,SJ;Ren,F
    貢獻者: 光電科學研究中心
    關鍵詞: GALLIUM NITRIDE NANOWIRES;RAMAN-SCATTERING;LUMINESCENCE BAND;PHOTOLUMINESCENCE;TEMPERATURE;NANORODS;DISORDER;DEFECTS;GROWTH
    日期: 2009
    上傳時間: 2010-06-30 15:39:27 (UTC+8)
    出版者: 中央大學
    摘要: Mg+ ions (60 keV) were implanted into GaN nanowires (NWs) with total fluxes of 5 x 10(12)-5 x 10(14) cm(-2) followed by thermal annealing at 700 degrees C in NZ ambient. Transmission electron microscopic images showed amorphous layer formation and defect accumulation in the higher dose Mg-implanted GaN NWs after annealing. Photoluminescence spectra (300 K) of the annealed Mg-implanted GaN NWs exhibited near-band-edge (NBE) emission, donor-acceptor pair (DAP) emission, and defect-related yellow luminescence. With increasing dose, the NBE and DAP emissions are red shifted. Similar phenomena were observed in samples implanted with At to produce similar amounts of lattice disorder. The NWs show a much higher sensitivity to defect accumulation than GaN thin films. (C) 2008 Elsevier Ltd. All rights reserved.
    關聯: VACUUM
    顯示於類別:[光電科學研究中心] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML1231檢視/開啟


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明