Fabrication of thin-GaN LED structures by Au-Si wafer bonding

NCUIR > Engineering College > National Central University Department of Chemical & Materials Engineering > journal & Dissertation > Item 987654321/30404

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/30404

Title:	Fabrication of thin-GaN LED structures by Au-Si wafer bonding
Authors:	HSU S. C. ,LIU C. Y.
Contributors:	化學工程與材料工程研究所
Keywords:	LIGHT-EMITTING-DIODES;LASER LIFT-OFF;SILICON;GROWTH;HETEROSTRUCTURE;TEMPERATURE;STRAIN;FILMS;GOLD
Date:	2006
Issue Date:	2010-07-06 16:18:40 (UTC+8)
Publisher:	中央大學
Abstract:	Using Au-Si wafer bonding and laser lift-off (LLO) techniques, an light emitting diode (LED) GaN epi layer was successfully transferred onto a Si substrate. After the wafer bonding, a KrF excimer laser was used to separate the GaN layer from the grown sap
Relation:	ELECTROCHEMICAL AND SOLID STATE LETTERS
Appears in Collections:	[National Central University Department of Chemical & Materials Engineering] journal & Dissertation

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