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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32235

    Title: The improvement in modulation speed of GaN-based green light-emitting diode, (LED) by use of n-type barrier, doping for plastic optical fiber (POF) communication
    Authors: Shi,J. -W.;Huang,H. -Y;Sheu,J. -K.;Chen,C. -H.;Wu,Y. -S.;Lai,W. -C.
    Contributors: 電機工程研究所
    Date: 2006
    Issue Date: 2010-07-06 18:21:56 (UTC+8)
    Publisher: 中央大學
    Abstract: We demonstrate a high-speed GaN-based light-emitting diode at a wavelength of around 500 nm for the application to plastic optical fiber communication. By use of the n-type doping in the GaN barrier layers of the InxGa1-xN-GaN-based multiple-quantum-well
    Appears in Collections:[電機工程研究所] 期刊論文

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