Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32322

Title:	Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire
Authors:	Lin,HF;Wu,CT;Chien,WC;Chen,SW;Kao,HL;Chyi,JI;Chen,JS
Contributors:	電機工程研究所
Keywords:	ELECTROMECHANICAL COUPLING COEFFICIENT;HELICON SPUTTERING SYSTEM;ALUMINUM NITRIDE;GAN;SAPPHIRE;VELOCITY
Date:	2005
Issue Date:	2010-07-06 18:24:04 (UTC+8)
Publisher:	中央大學
Abstract:	Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite str
Relation:	IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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