Tunneling current through a single germanium quantum dot

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32365

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32365

Title:	Tunneling current through a single germanium quantum dot
Authors:	Kuo,DMT;Li,PW
Contributors:	電機工程研究所
Keywords:	SIGE/SI-ON-INSULATOR;ELECTRON TRANSISTOR;ROOM-TEMPERATURE;SELECTIVE OXIDATION;OSCILLATIONS;TRANSPORT;ENERGY
Date:	2005
Issue Date:	2010-07-06 18:25:15 (UTC+8)
Publisher:	中央大學
Abstract:	The tunneling current through a germanium quantum dot (Ge QD) of nanometer size is studied theoretically. The energy levels and Coulomb interactions of electrons in a Ge QD are calculated using an effective mass model. In small Ge QDs, the interlevel Coul
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	321	View/Open

社群 sharing