0.13-mu m RF CMOS and varactors performance optimization by multiple gate layouts

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Title:	0.13-mu m RF CMOS and varactors performance optimization by multiple gate layouts
Authors:	Ho,CC;Kuo,CW;Chan,Y;Lien,WY;Guo,JC
Contributors:	電機工程研究所
Keywords:	0.18-MU-M
Date:	2004
Issue Date:	2010-07-06 18:25:37 (UTC+8)
Publisher:	中央大學
Abstract:	0.13-mum radio frequency (RF) CMOS devices with multifinger gate structure have been fabricated by the standard logic process, and the measured effective gate-length is 80 nm. Extensive RF characterization has been done to obtain cutoff frequency (f(T)),
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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