2.6 A, 0.69 MW cm(-2) single-chip bulk GaN p-i-n rectifier

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32376

Title:	2.6 A, 0.69 MW cm(-2) single-chip bulk GaN p-i-n rectifier
Authors:	Irokawa,Y;Luo,B;Kang,BS;Kim,J;LaRoche,JR;Ren,F;Baik,KH;Pearton,SJ;Pan,CC;Chen,GT;Chyi,JI;Park,SS;Park,YJ
Contributors:	電機工程研究所
Keywords:	HIGH-VOLTAGE;SCHOTTKY RECTIFIERS;BREAKDOWN VOLTAGE;PERFORMANCE;SEMICONDUCTORS;TRANSISTORS;WIDE
Date:	2004
Issue Date:	2010-07-06 18:25:42 (UTC+8)
Publisher:	中央大學
Abstract:	The performance of a 9 device array of 500 x 500 mum(2) GaN p-i-n rectifiers fabricated on epitaxial layers grown on a free-standing GaN template is reported. The forward turn-on voltage was similar to5.5 V at 25 degreesC, with an on-state resistance of s
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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