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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32407


    Title: Improved gate leakage and microwave power performance by inserting a thin praseodymium gate metal layer in AlGaAs/InGaAs doped-channel field effect transistors
    Authors: Hwu,MJ;Chju,HC;Yang,SC;Chan,YJ;Chang,LB
    Contributors: 電機工程研究所
    Date: 2004
    Issue Date: 2010-07-06 18:26:45 (UTC+8)
    Publisher: 中央大學
    Abstract: The Praseodymium (Pr) inserted gate AlGaAs/InGaAs heterostructure doped-channel field effect transistors (DCFETs) exhibit improved dc and rf power performance, as compared with the conventional ones, resulting from the gate leakage current reduction. The
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    Appears in Collections:[Graduate Institute of Electrical Engineering] journal & Dissertation

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