Improved gate leakage and microwave power performance by inserting a thin praseodymium gate metal layer in AlGaAs/InGaAs doped-channel field effect transistors

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题名:	Improved gate leakage and microwave power performance by inserting a thin praseodymium gate metal layer in AlGaAs/InGaAs doped-channel field effect transistors
作者:	Hwu,MJ;Chju,HC;Yang,SC;Chan,YJ;Chang,LB
贡献者:	電機工程研究所
日期:	2004
上传时间:	2010-07-06 18:26:45 (UTC+8)
出版者:	中央大學
摘要:	The Praseodymium (Pr) inserted gate AlGaAs/InGaAs heterostructure doped-channel field effect transistors (DCFETs) exhibit improved dc and rf power performance, as compared with the conventional ones, resulting from the gate leakage current reduction. The
關聯:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
显示于类别:	[電機工程研究所] 期刊論文

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