MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32415

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32415

Title:	MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors
Authors:	Irokawa,Y;Nakano,Y;Ishiko,M;Kachi,T;Kim,J;Ren,F;Gila,BP;Onstine,AH;Abernathy,CR;Pearton,SJ;Pan,CC;Chen,GT;Chyi,JI
Contributors:	電機工程研究所
Keywords:	CHEMICAL-VAPOR-DEPOSITION;N-TYPE GAN;INVERSION BEHAVIOR;ELECTRICAL CHARACTERIZATION;GATE OXIDE;DIODES;INTERFACE;DENSITY;DIELECTRICS;PERFORMANCE
Date:	2004
Issue Date:	2010-07-06 18:27:02 (UTC+8)
Publisher:	中央大學
Abstract:	We report the initial demonstration of an enhancement mode MgO/p-GaN metal-oxide-semiconductor field-effect transistor (MOSFET) utilizing Si ion-implanted regions under the source and drain to provide a source of minority carriers for inversion. The break
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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