Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32440

Title:	Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates
Authors:	Kang,BS;Ren,F;Irokawa,Y;Baik,KW;Pearton,SJ;Pan,CC;Chen,GT;Chyi,JI;Ko,HJ;Lee,HY
Contributors:	電機工程研究所
Keywords:	P-I-N;BREAKDOWN VOLTAGE;EDGE TERMINATION;POWER RECTIFIERS;DIODES;WIDE;DEVICES;DESIGN;PERFORMANCE
Date:	2004
Issue Date:	2010-07-06 18:27:55 (UTC+8)
Publisher:	中央大學
Abstract:	The performance of Schottky rectifiers fabricated with dielectric overlap edge termination on epitaxial layers grown on a free-standing GaN template is reported. The power figure-of-merit (V-B)(2)/R-ON where V-B is the reverse breakdown voltage and R-ON i
Relation:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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