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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32441

    Title: The microwave power performance comparisons of AlxGa1-xAs/In0.15Ga0.85As (x=0.3, 0.5, 0.7, 1.0) doped-channel HFETs
    Authors: Chin,HC;Yang,SC;Chan,YJ;Chen,SH;Liu,WS;Chyi,JI
    Contributors: 電機工程研究所
    Date: 2004
    Issue Date: 2010-07-06 18:27:58 (UTC+8)
    Publisher: 中央大學
    Abstract: The properties of doped-channel field-effect transistors (DCFET) have been thoroughly investigated on Al(x)Gal(1-x)As/InGaAs (x = 0.3, 0.5, 0.7, 1) heterostructures with various Al mole fractions. In this study, we observed that by introducing a 200-Angst
    Appears in Collections:[電機工程研究所] 期刊論文

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