The microwave power performance comparisons of AlxGa1-xAs/In0.15Ga0.85As (x=0.3, 0.5, 0.7, 1.0) doped-channel HFETs

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32441

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32441

Title:	The microwave power performance comparisons of AlxGa1-xAs/In0.15Ga0.85As (x=0.3, 0.5, 0.7, 1.0) doped-channel HFETs
Authors:	Chin,HC;Yang,SC;Chan,YJ;Chen,SH;Liu,WS;Chyi,JI
Contributors:	電機工程研究所
Keywords:	HETEROSTRUCTURE;BARRIER
Date:	2004
Issue Date:	2010-07-06 18:27:58 (UTC+8)
Publisher:	中央大學
Abstract:	The properties of doped-channel field-effect transistors (DCFET) have been thoroughly investigated on Al(x)Gal(1-x)As/InGaAs (x = 0.3, 0.5, 0.7, 1) heterostructures with various Al mole fractions. In this study, we observed that by introducing a 200-Angst
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	530	View/Open

社群 sharing