Low-frequency noise analysis of Si/SiGe channel pMOSFETs

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32553

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32553

Title:	Low-frequency noise analysis of Si/SiGe channel pMOSFETs
Authors:	Li,PW;Liao,WM
Contributors:	電機工程研究所
Keywords:	MOBILITY
Date:	2002
Issue Date:	2010-07-06 18:31:52 (UTC+8)
Publisher:	中央大學
Abstract:	Low-frequency noise characteristics of 0.1 mum Si1-xGex channel pMOSFETs were studied by numerical simulations in the framework of the carrier number fluctuation model as well as the correlated fluctuation in the mobility model. Simulation results predict
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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