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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32570


    Title: (AlxGa1-x)(0.5)In0.5P/In0.15Ga0.85As (x = 0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications
    Authors: Yang,SC;Chiu,HC;Chan,YJ;Lin,HH;Kuo,JM
    Contributors: 電機工程研究所
    Keywords: MOLECULAR-BEAM EPITAXY;INTERFACE;ALXGA1-XAS
    Date: 2001
    Issue Date: 2010-07-06 18:32:29 (UTC+8)
    Publisher: 中央大學
    Abstract: The quaternary (AlxGa1-x)(0.5)In0.5P(0 less than or equal to x less than or equal to 1) compounds on GaAs substrates are important materials used as a Schottky layer in microwave devices. In this report, we systematically investigated the electrical prope
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES
    Appears in Collections:[電機工程研究所] 期刊論文

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