High power density of AlGaAs/InGaAs doped-channel FETs with low DC power supply

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32607

Title:	High power density of AlGaAs/InGaAs doped-channel FETs with low DC power supply
Authors:	Chiu,HC;Yang,SC;Chien,FT;Chan,YJ
Contributors:	電機工程研究所
Keywords:	HIGH-EFFICIENCY;DESIGN;HEMTS
Date:	2001
Issue Date:	2010-07-06 18:33:49 (UTC+8)
Publisher:	中央大學
Abstract:	High power density Al(0.3)G(0.7)As/In0.15Ga0.85As doped-channel FETs (modified DCFETs) biased at 3V for 2.4GHz wireless communication applications are proposed. A planar Si delta -doped laver is inserted inside the wide-bandgap undoped AlGaAs layer to red
Relation:	ELECTRONICS LETTERS
Appears in Collections:	[電機工程研究所] 期刊論文

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