Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32626

Title:	Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots
Authors:	Hsu,TM;Chang,WH;Huang,CC;Yeh,NT;Chyi,JI
Contributors:	電機工程研究所
Keywords:	ELECTRON-HOLE ALIGNMENT;MU-M;DEPENDENCE
Date:	2001
Issue Date:	2010-07-06 18:34:30 (UTC+8)
Publisher:	中央大學
Abstract:	Electroreflectance was employed to study the electric-field effect on the interband transitions of InAs quantum dots embedded in an In0.16Ga0.84As matrix. The electric field caused an asymmetric quantum-confined Stark shift, which revealed a nonzero built
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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