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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32655


    Title: Experimental I-V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases
    Authors: Hsin,YM;Asbeck,PM
    Contributors: 電機工程研究所
    Keywords: HETEROJUNCTION BIPOLAR-TRANSISTORS;CURRENT GAIN
    Date: 2000
    Issue Date: 2010-07-06 18:35:33 (UTC+8)
    Publisher: 中央大學
    Abstract: N-p-n AlGaAs/GaAs and GaInP/GaAs (double) heterojunction bipolar transistors with thin base widths down to 200 Angstrom have been fabricated, and their collector and base current-voltage characteristics have been studied. The experimental results show tha
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[電機工程研究所] 期刊論文

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