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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32656

    Title: Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers
    Authors: Zhang,AP;Dang,G;Ren,F;Han,J;Cho,H;Pearton,SJ;Chyi,JI;Nee,TE;Lee,CM;Chuo,CC;Chu,SNG
    Contributors: 電機工程研究所
    Keywords: DEVICES
    Date: 2000
    Issue Date: 2010-07-06 18:35:35 (UTC+8)
    Publisher: 中央大學
    Abstract: High voltage GaN Schottky and p-i-n rectifiers have been fabricated on heteroepitaxial layers. The Schottky diodes have reverse blocking voltages around 500 V for vertical devices employing undoped, conducting GaN, whereas these voltages are >3000 V for l
    Appears in Collections:[電機工程研究所] 期刊論文

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