Processing and device performance of GaN power rectifiers

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32679

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32679

Title:	Processing and device performance of GaN power rectifiers
Authors:	Zhang,AP;Dang,GT;Cao,XA;Cho,H;Ren,F;Han,J;Chyi,JI;Lee,CM;Nee,TE;Chuo,CC;Chi,GC;Chu,SNG;Wilson,RG;Pearton,SJ
Contributors:	電機工程研究所
Date:	2000
Issue Date:	2010-07-06 18:36:23 (UTC+8)
Publisher:	中央大學
Abstract:	Mesa and planar geometry GaN Schottky rectifiers were fabricated on 3-12 mum thick epitaxial layers. In planar diodes utilizing resistive GaN, a reverse breakdown voltage of 3.1 kV was achieved in structures containing p-guard rings and employing extensio
Relation:	MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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