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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32685


    Title: Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region
    Authors: Yeh,NT;Lee,JM;Nee,TE;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: CHEMICAL-VAPOR-DEPOSITION;ROOM-TEMPERATURE;PHOTOLUMINESCENCE;INJECTION;EMISSION;INGAAS;THRESHOLD;MATRIX;NM
    Date: 2000
    Issue Date: 2010-07-06 18:36:36 (UTC+8)
    Publisher: 中央大學
    Abstract: Self-assembled In0.5Ga0.5As quantum-dot lasers with different doping schemes in the active region are investigated, Their lasing wavelength, characteristic temperature, quantum efficiency, and internal loss are characterized and correlated with the size,
    Relation: IEEE PHOTONICS TECHNOLOGY LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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